Carrier-induced ferromagnetism in concentrated and diluted local-moment systems
نویسندگان
چکیده
منابع مشابه
UMn2Al20: Small Itinerant Moment or Induced Local Moment Ferromagnetism?
Abstract. The magnetic susceptibility, specific heat, resistivity and inelastic neutron scattering spectrum were measured on the cubic heavy Fermion compound UMn2Al20. A ferromagnetic transition is observed in the magnetic susceptibility at Tc=20 K, but no anomaly is seen in the specific heat or resistivity at Tc. This behaviour is similar to that of the single-triplet induced moment ferromagne...
متن کاملLocal-moment ferromagnetism and unusual magnetic domains in Fe1Õ4TaS2 crystals
M. D. Vannette,1 S. Yeninas,1 E. Morosan,2 R. J. Cava,3 and R. Prozorov1,* 1Department of Physics & Astronomy and Ames Laboratory, Iowa State University, Ames, Iowa 50011, USA 2Department of Physics & Astronomy, Rice University, Houston, Texas 77005, USA 3Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA Received 18 May 2009; revised manuscript received 6 July 2009...
متن کاملCarrier-concentration-induced ferromagnetism in PbSnMnTe.
The influence of charge-carrier concentration on the magnetic properties of the semimagnetic semiconductor [(PbTe)l-x(SnTe)x]l-y[MnTe]y (x=0.72, y=O.03) is reported. Magnetization, magnetic susceptibility, and specific heat have been measured. For carrier concentrations below p = 3 x 10 cm 3 the alloy is paramagnetic. For p ~ 3 x 1020 cm 3 an abrupt transition to a fer romagnetic phase is obse...
متن کاملCarrier-induced ferromagnetism in p-Zn1ÀxMnxTe
We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn12xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance, and spin-dependent Hall effect measurements. T...
متن کاملFerromagnetism and Transport in Diluted Magnetic Semiconductors
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Chapter
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2004
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.70.075207